Optical Grade 6inch 8inch 4H-SEMI Type SiC Substrate for AR Glasses
A revolutionary optical-grade 4H-SiC substrate designed specifically for AR glasses, grown via Physical Vapor Transport (PVT) and refined through nano-scale polishing and low-stress slicing. This product achieves the world’s first single-layer waveguide full-color display solution, addressing critical challenges in AR optics:
- Ultra-High Refractive Index (n=2.619@750 nm): Outperforms traditional glass (1.5–1.9) and resin (1.4–1.7), enabling >80° field of view (FOV) with a thickness of only 0.55 mm and weight <2 g, eliminating the bulkiness and chromatic aberration of multi-layer glass solutions.
- Thermal Conductivity of 490 W/m·K: Efficiently dissipates heat from high-power optical modules, ensuring stable performance during prolonged use.
- Transmittance >95% (post-anti-reflective coating): Ultra-low absorption coefficient (α<0.5%/μm @550 nm) minimizes optical loss, enhancing brightness and contrast.
This substrate redefines lightweight, immersive AR experiences, driving the next generation of consumer-grade AR glasses.
6 Inch 8 Inch 4H-SEMI SiC Substrate Innovative Features
1. High Refractive Index with Low Dispersion
- Technical Breakthrough: The 4H polytype (ABCABCB stacking sequence) achieves n=2.619@750 nm, compressing grating periods to 300 nm to suppress environmental light diffraction, reducing chromatic dispersion by 40%.
- Application Value: Replaces traditional 3-layer glass waveguides with a single-layer SiC solution, reducing thickness by 80% and enabling compatibility with Micro LED micro-displays for high-resolution full-color rendering.
2. Ultra-Low Thermal Expansion Coefficient (CTE=3.7×10⁻⁶/K)
- Technical Breakthrough: The 4H-SiC crystal structure ensures thermal stability, with CTE 1/3 that of glass, preventing warping and optical path shifts under thermal cycling.
- Application Value: Operates reliably in -20–85°C environments, ideal for outdoor AR applications.
3. Nano-Scale Surface Flatness (Ra<0.2 nm)
- Technical Breakthrough: Combines chemical mechanical polishing (CMP) and plasma etching to eliminate subsurface damage, achieving ±5 nm etching precision.
- Application Value: Achieves 98% waveguide efficiency, minimizing light leakage.
4. Defect Density <0.04/cm² (8-inch)
- Technical Breakthrough: Advanced liquid-phase growth (TSSG) reduces microtube density to <0.04/cm² and dislocation density to <1000/cm².
- Application Value: Improves yield to >95%, lowering manufacturing costs.
5. Large-Scale 8-inch Production Capability
- Technical Breakthrough: 8-inch wafers reduce edge waste by 7%, yielding 10–12 AR lenses per wafer.
- Application Value: Reduces per-lens cost by 30–50%, accelerating mass-market adoption.
6 Inch 8 Inch 4H-SEMI SiC Substrate Applications
1. AR Lens Waveguides
- Function: 6 inch 8 inch 4H-SEMI SiC substrate acts as a substrate for surface-relief grating waveguides (SRG), enabling full-color, high-resolution displays.
- Advantage: Replaces multi-layer glass with a 0.55 mm-thin, <2 g lens, achieving FOV >80°.
2. Micro LED Display Modules
- Function: 6 inch 8 inch 4H-SEMI SiC substrate serves as a carrier for mass transfer of Micro LEDs, enhancing brightness and contrast.
- Advantage: High thermal conductivity (490 W/m·K) resolves Micro LED heat dissipation challenges, supporting >10,000 PPI pixel density.
3. AR Optical Stabilization Systems
- Function: Integrates MEMS micromirror arrays for dynamic light path compensation.
- Advantage: SiC’s mechanical strength (450 GPa Young’s modulus) and thermal resilience (-55–300°C) ensure reliability.
4. Smart Glasses Thermal Management
- Function: 6 inch 8 inch 4H-SEMI SiC substrate provides heat dissipation support for AR chips (e.g., SoCs, laser drivers).
- Advantage: Withstands >10 W/mm² transient power density, preventing thermal throttling.
6 Inch 4H-SEMI SiC Substrate Technical Parameter
| Crystal parameters |
| Type | 4H |
| Refractive index a | >2.6 @550nm |
| Absorptivity a | ≤0.5% @450-650nm |
MP transmittance a
(without anti-reflection conditions) | ≥66.5% |
| Haze a | ≤0.3% |
| Polymorphism a | None permitted |
| Microtube density | ≤0.5/cm² |
| Hexagonal void density | None permitted |
| Impurity Grain on Hexagonal a | None permitted |
| MP Inclusion a | None permitted |
| Mechanical parameters |
| Dia(inches) | 6 |
| Surface orientation | (0001)±0.3° |
| Notch reference edge | Notch |
| Notch orientation | <1-100>±2° |
| Notch angle | 90±5°/1° |
| Notch depth | 1 mm ±0.25 mm (-0 mm) |
| Surface treatment | C-Si side (CMP) |
| Wafer edge | Bevel |
| Surface roughness (AFM) | Ra≤0.2 nm
(5×5 µm scan area) |
| Thickness a (Tropel) | 500.0 µm ±25.0 µm |
| LTV (Tropel) | ≤2 µm |
| TTV a (Tropel) | ≤3 µm |
| Bow a (Tropel) | ≤5 µm |
| Warp a (Tropel) | <15 µm |
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6 Inch 8 Inch 4H-SEMI SiC Substrate FAQ
